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| Si6459BDQ New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -60 60 FEATURES ID (A) -2.7 -2.4 rDS(on) (W) 0.115 @ VGS = -10 V 0.150 @ VGS = -4.5 V D TrenchFETr Power MOSFET S* TSSOP-8 D S S G 1 2 3 4 Top View Ordering Information: SI6459BDQ-T1 D P-Channel MOSFET D 8D 7S 6S 5D G * Source Pins 2, 3, 6 and 7 must be tied common. ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0 1 mH 0.1 TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs -60 "20 -2.7 -2.2 -20 -1.25 15 11 1.50 1.0 Steady State Unit V -2.2 -1.8 A -0.83 mJ 1.0 0.67 W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72518 S-32220--Rev. A, 03-Nov-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 66 100 50 Maximum 83 120 60 Unit _C/W C/W 1 Si6459BDQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -60 V, VGS = 0 V VDS = -60 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -2.7 A VGS = -4.5 V, ID = -2.4 A VDS = -15 V, ID = -2.7 A IS = -1.25 A, VGS = 0 V -20 0.092 0.120 8 -0.8 -1.2 0.115 0.150 W S V -1 -3 "100 -1 -10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = -1.25 A, di/dt = 100 A/ms VDD = -30 V, RL = 30 W ID ^ -1 A, VGEN = -10 V, RG = 6 W VDS = -30 V, VGS = -10 V, ID = -2.7 A 14.5 2.2 3.7 14 10 15 50 35 30 15 22 75 55 50 ns W 22 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 5 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 Transfer Characteristics 12 4V 12 8 8 TC = 125_C 25_C 0 -55_C 0 1 2 3 4 5 4 3V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 4 VGS - Gate-to-Source Voltage (V) Document Number: 72518 S-32220--Rev. A, 03-Nov-03 www.vishay.com 2 Si6459BDQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.30 r DS(on) - On-Resistance ( W ) 0.25 0.20 0.15 0.10 0.05 0.00 0 4 8 12 16 20 VGS = 4.5 V VGS = 10 V C - Capacitance (pF) 1000 Vishay Siliconix Capacitance 800 Ciss 600 400 200 Coss Crss 0 10 20 30 40 50 60 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 30 V ID = 2.7 A 8 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.7 A 6 4 2 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) r DS(on) - On-Resistance (W) (Normalized) -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 On-Resistance vs. Gate-to-Source Voltage ID = 2.7 A TJ = 25_C 1 0.0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72518 S-32220--Rev. A, 03-Nov-03 www.vishay.com 3 Si6459BDQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 50 Single Pulse Power 0.4 V GS(th) Variance (V) ID = 250 mA 40 Power (W) 0.2 30 0.0 20 -0.2 10 -0.4 -50 -25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 10 100 600 TJ - Temperature (_C) Time (sec) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) IDM Limited 10 I D - Drain Current (A) P(t) = 0.0001 1 ID(on) Limited 0.1 TA = 25_C Single Pulse BVDSS Limited 1 10 P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 100 0.01 0.1 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72518 S-32220--Rev. A, 03-Nov-03 Si6459BDQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Vishay Siliconix Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72518 S-32220--Rev. A, 03-Nov-03 www.vishay.com 5 |
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